Strained Ge overlayer on a Si(001)-(2X1) surface

被引：7

作者：

Kahng, SJ ^{[1
]}

Ha, YH

Moon, DW

Kuk, Y

机构：

[1] Seoul Natl Univ, ISRC, Ctr Sci Nanometer Scale, Seoul 151742, South Korea

[2] Seoul Natl Univ, Dept Phys, Seoul 151742, South Korea

[3] Korean Res Inst Stand & Sci, Surface Anal Grp, Taejon 305606, South Korea

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.61.10827

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The epitaxial growth behavior and the strain distribution of Ge overlayer grown on Si(001)-(2x1) surface were studied with medium energy ion scattering spectroscopy and scanning tunneling microscopy. We were able to grow flat Ge overlayers up to ten monolayers, thicker than the known critical thickness of Stranski-Krastanov growth mode, with hydrogen surfactant, as suggested by recent theories. By comparing the dips of Ge overlayer and Si bulk in the angular scan of ion blocking, we found that the flat Ge overlayer is uniformly strained in the direction perpendicular to a surface while the overlayer with three-dimensional islands is fully relaxed at the thickness of ten monolayers.

引用

页码：10827 / 10831

页数：5

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