Silicon electro-optic modulator with high-permittivity gate dielectric layer

被引：4
|
作者：
Zhu, Mengxia [2 ]
Zhou, Zhiping [1 ,3 ]
Gao, Dingshan [2 ]
机构：
[1] Peking Univ, State Key Lab Adv Opt Commun Syst & Networks, Beijing 100871, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China
[3] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
来源：
CHINESE OPTICS LETTERS | 2009年 / 7卷 / 10期
关键词：
SOI;
D O I：
10.3788/COL20090710.0924
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A high-permittivity (high-k) material is applied as the gate dielectric layer in a silicon metal-oxide-semiconductor (MOS) capacitor to form a special electro-optic (EO) modulator. Both induced charge density and modulation efficiency in the proposed modulator are improved due to the special structure design and the application of the high-k material. The device has an ultra-compact dimension of 691 mu m in length.
引用
收藏
页码：924 / 925
页数：2
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