Modeling and Simulation of 2 kV 50 A SiC MOSFET/JBS Power Modules

被引：29

作者：

Chen, Zheng ^{[1
]}

Burgos, Rolando ^{[1
]}

Boroyevich, Dushan ^{[1
]}

Wang, Fred ^{[1
]}

Leslie, Scott ^{[2
]}

机构：

[1] Virginia Polytech Inst & State Univ, Bradley Dept Elect & Comp Engn, Ctr Power Elect Syst, Blacksburg, VA 24061 USA

[2] POWEREX INC, Youngwood, PA 15697 USA

来源：

2009 IEEE ELECTRIC SHIP TECHNOLOGIES SYMPOSIUM | 2009年

关键词：

D O I：

10.1109/ESTS.2009.4906542

中图分类号：

U6 [水路运输]; P75 [海洋工程];

学科分类号：

0814 ; 081505 ; 0824 ; 082401 ;

摘要：

This paper presents a methodology for modeling the high-voltage silicon carbide (SiC) MOSFET/Junction-Barrier Schottky (JBS) diode power modules. The electrical model of an actual high-voltage SiC MOSFET/JBS module has been obtained using computer-aided electromagnetic analysis and verified through measurements. A circuit simulation model of a 2 kV, 5 A 4-H SiC MOSFET has also been built based on Hefner MOSFET model and the published experimental data. The device and package models are then combined together in the circuit simulation of a double-pulse test. The simulation results obtained provide good insight into the fast switching behavior and parametric dependencies of the paralleled SiC dice, which will aid in the module physical layout and gate driver design, as well as switching and conduction loss analysis.

引用

页码：393 / +

页数：2

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