Derivation of V function for LR 115 SSNTD from its partial sensitivity to 222Rn and its short-lived progeny

被引:9
作者
Leung, S. Y. Y. [1 ]
Nikezic, D. [1 ]
Yu, K. N. [1 ]
机构
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
关键词
detector sensitivity; solid-state nuclear track detector; LR; 115; detector; track etch; bulk etch;
D O I
10.1016/j.jenvrad.2006.09.006
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Solid-state nuclear track detectors (SSNTDs) have been widely applied for measurements of environmental concentrations of Rn-222 and its progeny. The V function for an SSNTD is important for understanding the track development in the SSNTD as well as for real life applications. The partial sensitivity pi of the LR 115 detector applied in the bare mode to Rn-222 and its short-lived progeny is related to the equilibrium factor F through the proxy equilibrium factor F-P. On the other hand, rho(i) is also dependent on the removed active layer thickness during chemical etching, which is related to the V function for the LR 115 detector. In the present paper, the experimentally obtained pi values of the LR H 5 detector for different removed active layer thickness are used to derive the V function for the LR 115 SSNTD, which took the form of the Durrani-Green's function, i.e., V = 1 + (a(1) e(-a2R) + a(3) e(-a1R)) (1 - e(-a5R)), with the best-fitted constants as a(1) = 14.23; a(2) = 0.48; a(3) = 5.9 and a(4) = 0.077 (a(5) = 1). (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:55 / 61
页数:7
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