Simulation of J0 imaging techniques with PVMOS

A detailed understanding of the behavior of multi-crystalline silicon solar cells needs to consider the impact of inhomogeneities, and therefore requires means for characterizing as well as modeling inhomogeneities. In this work the capabilities of the modeling tool Photo -Voltaic Module Simulator (PVMOS) to model inhomogeneous devices are demonstrated. To this end photo -luminescence (PL) based saturation current density (J(0)) imaging techniques are investigated. A realistic spatial Jo distribution is modeled by importing an experimental J(0)-image of a 15.6x15.6cm(2) solar cell in our simulator. Subsequently, we use PVMOS to simulate two J(0) imaging techniques. This allows for an estimation of the accuracy of the J(0) imaging methods as we can directly compare the J(0) input data with the reconstructed J(0) image.