Low dose failures of hardened DC-DC power converters

被引：0

作者：

Lehman, J ^{[1
]}

Yui, C ^{[1
]}

Rax, BG ^{[1
]}

Miyahira, TF ^{[1
]}

Wiedeman, A ^{[1
]}

Schrock, P ^{[1
]}

Swift, GM ^{[1
]}

Johnston, AH ^{[1
]}

Kayali, S ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

2002 IEEE RADIATION EFFECTS DATA WORKSHOP, WORKSHOP RECORD | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation tests of Interpoint DC-DC converters, guaranteed by the manufacturer to 100 krad(Si), showed catastrophic failures at total dose levels as low as 4 krad(Si). Special diagnostic tests showed that failures were caused by an internal CMOS MOSFET driver chip being used in an application that differed from earlier radiation tests of the component. This paper discusses radiation testing, failure modes, and the method used to overcome this problem weeks prior to launch of two space systems.

引用

页码：109 / 114

页数：6

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