Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma

被引：4

作者：

Gao, JS ^{[1
]}

Wang, JL

Sakai, N

Iwanaga, K

Muraoka, K

Nakashima, H

Gao, DW

Furukawa, K

机构：

[1] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580, Japan

[2] Kyushu Univ, Adv Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2000年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.582269

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

It was found that epitaxial Si films could be deposited on Si substrates by using a sputtering-type electron cyclotron resonance plasma that had a conventional base pressure of 5 X 10(-7) Torr. The effects of discharge conditions and substrate temperature were studied systematically in order to understand the necessary conditions for epitaxial growth. It was found that discharge gas pressure, target power for sputtering, and substrate temperature play crucial roles in the epitaxial deposition. The implications of the changes of the three parameters are discussed in detail. (C) 2000 American Vacuum Society. [S0734-2101(00)02503-3].

引用

页码：873 / 878

页数：6

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