Thin film field effect transistors using single-walled carbon nanotubes

Characteristics of aggregated single-walled carbon nanotube (SWNT) as a channel of thin film field effect transistors (TFFETs) were examined. SWNTs were dispersed in a dimethylformamide solution in a narrow bundle structure to form non-aligned arrays, which became channels of FETs. The network-SWNT-FETs produced in this solution process was found to have a mobility of 10.9 cm(2)/Vs, similar to 100 times as high as those reported for other solution-processed organic thin film FETs formed by solution processes, while a on/off ratio. was similar to 10(2). Well-known electrical breakdown allowed us to improve the on/off ratio by removing metallic SWNTs selectively. Further progress in TFFET is also presented.