Anomalous charge collection in Silicon Carbide Schottky Barrier Diodes and resulting permanent damage and single-event burnout

被引：79

作者：

Kuboyama, Satoshi ^{[1
]}

Kamezawa, Chihiro

Ikeda, Naomi

Hirao, Toshio

Ohyama, Hidenori

机构：

[1] Japan Aerosp Explorat Agcy, Tsukuba, Ibaraki 3058505, Japan

[2] Japan Atom Energy Agcy, Takasaki, Gumma 3701292, Japan

[3] Kumamoto Natl Coll Technol, Kumamoto 8611102, Japan

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期

关键词：

heavy ion; Schottky barrier diode; silicon carbide; single-event burnout;

D O I：

10.1109/TNS.2006.885165

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It was demonstrated that Silicon Carbide Schottky Barrier Diodes exhibited anomalous charge collection with heavy ion irradiation. Consequently, the permanent damage and Single-Event Burnout was observed in spite of no known current sustaining mechanism. A model for the mechanism was proposed based on the device simulation.

引用

页码：3343 / 3348

页数：6

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