Kinetic Monte Carlo simulation of semiconductor quantum dot growth

被引：0

作者：

Zhao, C. ^{[1
]}

Chen, Y. H. ^{[1
]}

Sun, J. ^{[1
]}

Lei, W. ^{[1
]}

Cui, C. X. ^{[1
]}

Yu, L. K. ^{[1
]}

Li, K. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

NANOSCIENCE AND TECHNOLOGY, PTS 1 AND 2 | 2007年 / 121-123卷

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

Monte Carlo simulation; molecular beam epitaxy; kinetic effect; quantum dot;

D O I：

10.4028/www.scientific.net/SSP.121-123.1073

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

引用

页码：1073 / 1076

页数：4

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