Effect of DC bias on microstructural rearrangement of a-SiN:H films on PET substrate

被引：6
作者：
Swain, Bibhu P. [1 ]
Swain, Bhabani S. [1 ]
Hwang, Nong M. [1 ]
机构：
[1] Seoul Natl Univ, Natl Res Lab Charged Nanoparticles, Dept Mat Sci & Engn, Seoul, South Korea
来源：
APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 23期
关键词：
a-SiN:H; HWCVD; SAXS; Raman; FESEM; CHEMICAL-VAPOR-DEPOSITION; NITRIDE THIN-FILMS; SILICON-NITRIDE; SIC-H; HWCVD; PASSIVATION;
D O I：
10.1016/j.apsusc.2009.07.041
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Hydrogenated amorphous silicon nitride (a-SiN:H) films were deposited on flexible polyethylene terephthalate substrates at temperature as low as 100 degrees C by hot-wire chemical vapor deposition using SiH(4), H(2) and NH(3) precursors. Field emission scanning emission microscopy, Raman spectroscopy, Fourier transform infrared spectroscopy and small angle X-ray scattering were employed to study structural and microstructural properties of a-SiN:H films. Therms surface roughness increased with increase of positive bias to substrate. Intermediate range order, porosity and interface inhomogeneity in amorphous of a-SiN:H film sevaluated by acoustic and optical phonon of silicon network, Guinier plot and correlated length from Raman and SAXS characterizations. The fractal behavior of a-SiN:H domains approached the perfect symmetry and the intermediate range order of a-SiN:H films deteriorate with increase of the positive substrate bias. Both correlation length and void size of the a-SiN: H amorphous domain increased with increase of the substrate bias from 0 to + 200 V. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码：9391 / 9395
页数：5
相关论文
共 14 条
  • [1] Effects of plasma pretreatment on silicon nitride barrier films on polycarbonate substrates
    Chen, T. N.
    Wuu, D. S.
    Wu, C. C.
    Chiang, C. C.
    Lin, H. B.
    Chen, Y. P.
    Horng, R. H.
    [J]. THIN SOLID FILMS, 2006, 514 (1-2) : 188 - 192
  • [2] Cat-CVD SiN passivation films for OLEDs and packaging
    Heya, Akira
    Minamikawa, Toshiharu
    Niki, Toshikazu
    Minami, Shigehira
    Masuda, Atsushi
    Umemoto, Hironobu
    Matsuo, Naoto
    Matsumura, Hideki
    [J]. THIN SOLID FILMS, 2008, 516 (05) : 553 - 557
  • [3] OPTICAL CHARACTERISTICS OF AMORPHOUS-SILICON NITRIDE THIN-FILMS PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION
    INUKAI, T
    ONO, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (5A): : 2593 - 2598
  • [4] Observation of incident angle dependent phonon absorption in hydrogenated amorphous silicon nitride thin films
    Li, T
    Kanicki, J
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (26) : 3866 - 3868
  • [5] Various applications of silicon nitride by catalytic chemical vapor deposition for coating, passivation and insulating films
    Masuda, A
    Umemoto, H
    Matsumura, H
    [J]. THIN SOLID FILMS, 2006, 501 (1-2) : 149 - 153
  • [6] MATSUMOTO M, 2006, ECS T, V3, P119
  • [7] Effect of filament temperature on HWCVD deposited a-SiC: H
    Swain, Bibhu P.
    Dusane, Rajiv O.
    [J]. MATERIALS LETTERS, 2006, 60 (24) : 2915 - 2919
  • [8] SAXS analysis of the effect of H2 dilution on microstructural changes of HWCVD deposited a-SiC : H
    Swain, Bibhu P.
    [J]. MATERIALS LETTERS, 2006, 60 (21-22) : 2767 - 2772
  • [9] Investigation of local order of a-SiN:H films deposited by hot wire chemical vapour deposition (HWCVD)
    Swain, Bibhu P.
    Swain, Bhabani S.
    Hwang, Nong M.
    [J]. APPLIED SURFACE SCIENCE, 2008, 255 (05) : 2557 - 2560
  • [10] Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric
    Tiwari, S. P.
    Sninivas, P.
    Shriram, S.
    Kale, Nitin S.
    Mhaisalkar, S. G.
    Rao, V. Ramgopal
    [J]. THIN SOLID FILMS, 2008, 516 (05) : 770 - 772
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