100 A and 3.1 kV 4H-SiC GTO Thyristors

被引：3
|
作者：
Van Campen, S [1 ]
Ezis, A [1 ]
Zingaro, J [1 ]
Storaska, G [1 ]
Clarke, RC [1 ]
Elliott, K [1 ]
Grumman, N [1 ]
机构：
[1] Northrop Grumman, Adv Mat & Semicond Device Technol Ctr, Baltimore, MD 21203 USA
来源：
IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年
关键词：
D O I：
10.1109/LECHPD.2002.1146732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report on asymmetric SiC GTOs (Gate Turn-Off Thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm x 1 mm. GTOs connected in parallel has demonstrated 100 Amps of switching current capability. This is the highest current reported to date with GTOs designed for greater than 3 kV forward blocking voltage [1]. GTOs fabricated from the same wafer have achieved a forward blocking voltage of 3.1 kV, which was the testing limit of the instrumentation. This represents a record high breakdown voltage for GTOs with a drift layer thickness of 30 mum [1-4]. These GTOs also demonstrated record low leakage currents of < 5 muA at the forward blocking voltage of 3.1 kV.
引用
收藏
页码：58 / 64
页数：7
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