100 A and 3.1 kV 4H-SiC GTO Thyristors

被引：3

作者：

Van Campen, S ^{[1
]}

Ezis, A ^{[1
]}

Zingaro, J ^{[1
]}

Storaska, G ^{[1
]}

Clarke, RC ^{[1
]}

Elliott, K ^{[1
]}

Grumman, N ^{[1
]}

机构：

[1] Northrop Grumman, Adv Mat & Semicond Device Technol Ctr, Baltimore, MD 21203 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146732

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we report on asymmetric SiC GTOs (Gate Turn-Off Thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm x 1 mm. GTOs connected in parallel has demonstrated 100 Amps of switching current capability. This is the highest current reported to date with GTOs designed for greater than 3 kV forward blocking voltage [1]. GTOs fabricated from the same wafer have achieved a forward blocking voltage of 3.1 kV, which was the testing limit of the instrumentation. This represents a record high breakdown voltage for GTOs with a drift layer thickness of 30 mum [1-4]. These GTOs also demonstrated record low leakage currents of < 5 muA at the forward blocking voltage of 3.1 kV.

引用

页码：58 / 64

页数：7

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