100 A and 3.1 kV 4H-SiC GTO Thyristors

被引：3
|
作者：
Van Campen, S [1 ]
Ezis, A [1 ]
Zingaro, J [1 ]
Storaska, G [1 ]
Clarke, RC [1 ]
Elliott, K [1 ]
Grumman, N [1 ]
机构：
[1] Northrop Grumman, Adv Mat & Semicond Device Technol Ctr, Baltimore, MD 21203 USA
来源：
IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年
关键词：
D O I：
10.1109/LECHPD.2002.1146732
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report on asymmetric SiC GTOs (Gate Turn-Off Thyristors), fabricated at Northrop Grumman with the assistance of Silicon Power Co. A module containing six 1 mm x 1 mm. GTOs connected in parallel has demonstrated 100 Amps of switching current capability. This is the highest current reported to date with GTOs designed for greater than 3 kV forward blocking voltage [1]. GTOs fabricated from the same wafer have achieved a forward blocking voltage of 3.1 kV, which was the testing limit of the instrumentation. This represents a record high breakdown voltage for GTOs with a drift layer thickness of 30 mum [1-4]. These GTOs also demonstrated record low leakage currents of < 5 muA at the forward blocking voltage of 3.1 kV.
引用
收藏
页码：58 / 64
页数：7
相关论文
共 50 条
  • [1] Dynamic performance of 3.1 kV 4H-SiC asymmetrical GTO thyristors
    Agarwal, AK
    Ivanov, PA
    Levinshtein, ME
    Palmour, JW
    Rumyantsev, SL
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1349 - 1352
  • [2] 7 kV 4H-SiC GTO thyristors
    Van Campen, S
    Ezis, A
    Zingaro, J
    Storaska, G
    Clarke, RC
    Temple, V
    Thompson, M
    Hansen, T
    SILICON CARBIDE 2002-MATERIALS, PROCESSING AND DEVICES, 2003, 742 : 381 - 386
  • [3] Switching characteristics of 3kV 4H-SiC GTO thyristors
    Fedison, J.B.
    Chow, T.P.
    Agarwal, A.
    Ryu, S.
    Singh, R.
    Kordina, O.
    Palmour, J.
    2000, IEEE, Piscataway, NJ, United States
  • [4] Optical triggering of 12 kV, 100 A 4H-SiC thyristors
    Rumyantsev, S. L.
    Levinshtein, M. E.
    Shur, M. S.
    Saxena, T.
    Zhang, Q. J.
    Agarwal, A. K.
    Palmour, J. W.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (01)
  • [5] Factors influencing the design and performance of 4H-SiC GTO thyristors
    Fedison, JB
    Chow, TP
    Ghezzo, M
    Kretchmer, JW
    Nielsen, MC
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1391 - 1394
  • [6] Factors influencing the design and performance of 4H-SiC GTO thyristors
    Fedison, J.B.
    Chow, T.P.
    Ghezzo, M.
    Kretchmer, J.W.
    Nielsen, M.C.
    Materials Science Forum, 2000, 338
  • [7] A simple multistep etched termination technique for 4H-SiC GTO thyristors
    Li, Zhigiang
    Zhou, Kun
    Zhang, Lin
    Xu, Xingliang
    Li, Lianghui
    Li, Juntao
    Dai, Gang
    SOLID-STATE ELECTRONICS, 2019, 151 : 1 - 5
  • [8] Characteristics of epitaxial and implanted N-base 4H-SiC GTO thyristors
    Fedison, JB
    Chow, TP
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 739 - 742
  • [9] Characteristics of epitaxial and implanted n-base 4H-SiC GTO thyristors
    Fedison, J.B.
    Chow, T.P.
    Materials Science Forum, 2001, 353-356 : 739 - 742
  • [10] 3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC
    Ryu, SH
    Agarwal, AK
    Singh, R
    Palmour, JW
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (03) : 127 - 129
12345