Maximizing the Functional Yield of Wafer-to-Wafer 3-D Integration

被引:55
作者
Reda, Sherief [1 ]
Smith, Gregory [2 ]
Smith, Larry [2 ]
机构
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
[2] SEMATECH, Austin, TX 78714 USA
关键词
3-D IC; wafer to wafer integration; yield;
D O I
10.1109/TVLSI.2008.2003513
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Three-dimensional integrated circuit technology with through-silicon vias offers many advantages, including improved form factor, increased circuit performance, robust heterogenous integration, and reduced costs. Wafer-to-wafer integration supports the highest possible density of through-silicon vias and highest throughput; however, in contrast to die-to-wafer integration, it does not benefit from the ability to bond only tested and diced good die. In wafer-to-wafer integration, wafers are entirely bonded together, which can unintentionally integrate a bad die from one wafer to a good die from another wafer reducing the yield. In this paper, we propose solutions that maximize the yield of wafer-to-wafer 3-D integration, assuming that the individual die can be tested on the wafers before bonding. We exploit some of the available flexibility in the integration process, and propose wafer assignment algorithms that maximize the number of good 3-D ICs. Our algorithms range from scalable, fast heuristics to optimal methods that exactly maximize the yield of wafer-to-wafer 3-D integration. Using realistic defect models and yield simulations, we demonstrate the effectiveness of our methods up to large numbers of wafer stacks. Our results demonstrate that it is possible to significantly improve the yield in comparison to yield-oblivious wafer assignment methods.
引用
收藏
页码:1357 / 1362
页数:6
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