Low density 1.55 μm InAs/InGaAsP/InP (100) quantum dots enabled by an ultrathin GaAs interlayer

被引：11
|
作者：
van Veldhoven, P. J. [1 ]
Chauvin, N. [1 ]
Fiore, A. [1 ]
Notzel, R. [1 ]
机构：
[1] Eindhoven Univ Technol, COBRA Res Inst Commun Technol, NL-5600 MB Eindhoven, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期
关键词：
SINGLE;
D O I：
10.1063/1.3230496
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report the formation of low density InAs/InGaAsP/InP (100) quantum dots (QDs) by metalorganic vapor phase epitaxy enabled by an ultrathin GaAs interlayer. For small InAs amount and low group-V flow rate, the QD density is reduced to below 10 QDs/mu m(2). Increasing the group-V flow rate slightly increases the QD density and shifts the QD emission wavelength into the 1.55 mu m telecommunication region. Without GaAs interlayer, the QD density is drastically increased. This is attributed to the suppression of As/P exchange during QD growth by the GaAs interlayer avoiding the formation of excess InAs. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3230496]
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