Effects of hydrogen atoms on redistribution of implanted boron atoms in silicon during annealing

被引：0

作者：

Yokota, Katsuhiro ^{[1
]}

Nakase, Shuusaku ^{[1
]}

Myashita, Fumiyoshi ^{[2
]}

机构：

[1] Kansai Univ, Fac Engn & HRC, Suita, Osaka 5648680, Japan

[2] Kansai Univ, Fac Informat, Osaka 5691095, Japan

来源：

ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷

关键词：

silicon; boron; hydrogen; diffusion; activation; ion-implantation;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon dual-implanted with B and H ions were annealed at temperatures of 700-900 degrees C for 30 min. On Si annealed at temperatures below 800 degrees C, the redistribution profile of B atoms was the same as that on the as-implanted Si because transient-enhanced diffusion of implanted B atoms was restricted by the presence of H atoms. On highly doped Si annealed at 900 degrees C, the diffusion of B atoms was independent of B atom concentration although it was significantly retarded in comparison with that on singly B-implanted Si.

引用

页码：88 / +

页数：2

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[41] Investigation into the diffusion of boron, phosphorus, and arsenic in silicon during annealing in a nonisothermal reactor [J].

Rudakov V.I. ;

Ovcharov V.V. ;

Lukichev V.F. ;

Denisenko Y.I. .

Russian Microelectronics, 2014, 43 (04) :284-298

[42] Initial anomalous diffusion of boron atoms at low-temperature annealing [J].

Saito, T ;

Xia, JX ;

Kim, R ;

Aoki, T ;

Kobayashi, H ;

Furuta, Y ;

Kamakura, Y .

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 2001, 84 (10) :59-64

[43] HOLE TRAPPING BY BORON ATOMS IN SILICON AT LOW TEMPERATURES. [J].

Godik, E.E. ;

Kuritsyn, Yu.A. ;

Sinis, V.P. .

1978, 12 (01) :51-53

[44] Simultaneous observation of the diffusion of self-atoms and co-implanted boron and carbon in silicon investigated by isotope heterostructures [J].

Uematsu, Masashi ;

Matsubara, Kota ;

Itoh, Kohei M. .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (07)

[45] Controlling boron diffusion during rapid thermal annealing with co-implantation by amphoteric impurity atoms [J].

Yu. V. Makarevich ;

F. F. Komarov ;

A. F. Komarov ;

A. M. Mironov ;

G. M. Zayats ;

S. A. Miskevich .

Bulletin of the Russian Academy of Sciences: Physics, 2012, 76 (5) :574-576

[46] Boron redistribution during crystallization of phosphorus-doped amorphous silicon [J].

Simola, R. ;

Mangelinck, D. ;

Portavoce, A. ;

Bernardini, J. ;

Fornara, P. .

ION IMPLANTATION TECHNOLOGY, 2006, 866 :125-+

[47] Recrystallization and Reactivation of Dopant Atoms in Ion-Implanted Silicon Nanowires [J].

Fukata, Naoki ;

Takiguchi, Ryo ;

Ishida, Shinya ;

Yokono, Shigeki ;

Hishita, Shunichi ;

Murakami, Kouichi .

ACS NANO, 2012, 6 (04) :3278-3283

[48] Interaction between implanted fluorine atoms and point defects in preamorphized silicon [J].

Impellizzeri, G ;

dos Santos, JHR ;

Mirabella, S ;

Napolitani, E ;

Carnera, A ;

Priolo, F .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 230 :220-224

[49] Redistribution of H atoms in the upper atmosphere during geomagnetic storms [J].

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Waldrop, Lara ;

Makela, Jonathan J. .

JOURNAL OF GEOPHYSICAL RESEARCH-SPACE PHYSICS, 2017, 122 (10) :10686-10693

[50] Anomalous uphill diffusion and dose loss of ultra-low-energy implanted boron in silicon during early stage of annealing [J].

Tsuji, H ;

Furuhashi, M ;

Tachi, M ;

Taniguchi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (03) :873-876

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