Effects of hydrogen atoms on redistribution of implanted boron atoms in silicon during annealing

被引：0
作者：
Yokota, Katsuhiro [1 ]
Nakase, Shuusaku [1 ]
Myashita, Fumiyoshi [2 ]
机构：
[1] Kansai Univ, Fac Engn & HRC, Suita, Osaka 5648680, Japan
[2] Kansai Univ, Fac Informat, Osaka 5691095, Japan
来源：
ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷
关键词：
silicon; boron; hydrogen; diffusion; activation; ion-implantation;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon dual-implanted with B and H ions were annealed at temperatures of 700-900 degrees C for 30 min. On Si annealed at temperatures below 800 degrees C, the redistribution profile of B atoms was the same as that on the as-implanted Si because transient-enhanced diffusion of implanted B atoms was restricted by the presence of H atoms. On highly doped Si annealed at 900 degrees C, the diffusion of B atoms was independent of B atom concentration although it was significantly retarded in comparison with that on singly B-implanted Si.
引用
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页码：88 / +
页数：2
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