Kinetic Monte Carlo Modeling of Charge Carriers in Organic Electronic Devices: Suppression of the Self-Interaction Error

被引:20
作者
Li, Haoyuan [1 ,2 ]
Bredas, Jean-Luc [1 ,2 ]
机构
[1] King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Lab Computat & Theoret Chem Adv Mat, Thuwal 239556900, Saudi Arabia
[2] Georgia Inst Technol, Sch Chem & Biochem, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
来源
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2017年 / 8卷 / 11期
关键词
TRANSPORT; FIELD; SEMICONDUCTORS; ENERGY; SIMULATION; DEPENDENCE; EFFICIENCY; DISORDER; DENSITY;
D O I
10.1021/acs.jpclett.7b01161
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Kinetic Monte Carlo (KMC) simulations have emerged as an important tool to help improve the efficiency of organic electronic devices by providing a better understanding of their device physics. In the KMC simulation of an organic device, the reliability of the results depends critically on the accuracy of the chosen charge-transfer rates, which are themselves strongly influenced by the site-energy differences. These site-energy differences include components coming from the electrostatic forces present in the system, which are often evaluated through electric potentials described by the Poisson equation. Here we show that the charge-carrier self-interaction errors that appear when evaluating the site-energy differences can lead to unreliable simulation results. To eliminate these errors, we propose two approaches that are also found to reduce the impact of finite-size effects. As a consequence, reliable results can be obtained at reduced computational costs. The proposed methodologies can be extended to other device simulation techniques as well.
引用
收藏
页码:2507 / 2512
页数:6
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