Bulk-surface relationship of an electronic structure for high-throughput screening of metal oxide catalysts

被引:8
作者
Kweun, Joshua Minwoo [1 ]
Li, Chenzhe [1 ]
Zheng, Yongping [1 ,2 ]
Cho, Maenghyo [1 ]
Kim, Yoon Young [1 ]
Cho, Kyeongjae [1 ,2 ]
机构
[1] Seoul Natl Univ, Dept Mech & Aerosp Engn, Seoul 08826, South Korea
[2] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
基金
新加坡国家研究基金会;
关键词
Bulk-surface relationship (BSR); Density functional theory (DFT); Metal oxide catalyst; High-throughput screening (HTS); Ligand field; Correlation study; OXYGEN-REDUCTION ACTIVITY; METHANE COMBUSTION; LOW-COST; LAMNO3; TRANSITION; DFT; 1ST-PRINCIPLES; PEROVSKITES; ADSORPTION; DESIGN;
D O I
10.1016/j.apsusc.2016.02.093
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Designing metal-oxides consisting of earth-abundant elements has been a crucial issue to replace precious metal catalysts. To achieve efficient screening of metal-oxide catalysts via bulk descriptors rather than surface descriptors, we investigated the relationship between the electronic structure of bulk and that of the surface for lanthanum-based perovskite oxides, LaMO3 (M = Ti, V, Cr, Mn, Fe, Co, Ni, Cu). Through density functional theory calculations, we examined the d-band occupancy of the bulk and surface transition-metal atoms (n(Bulk) and n(surf)) and the adsorption energy of an oxygen atom (E-ads) on (001), (110), and (111) surfaces. For the (001) surface, we observed strong correlation between the n(Bulk) and n(Surf) with an R-squared value over 94%, and the result was interpreted in terms of ligand field splitting and anti-bonding/bonding level splitting. Moreover, the E-ads on the surfaces was highly correlated with the n(Bulk) with an R-squared value of more than 94%, and different surface relaxations could be explained by the bulk electronic structure (e.g., LaMnO3 vs. LaTiO3). These results suggest that a bulk-derived descriptor such as n(Bulk) can be used to screen metal-oxide catalysts. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:279 / 290
页数:12
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