A 2-D analytical model for cylindrical gate tunnel FET (CG-TFET) based on center potential

被引：1

作者：

Dash, Sidhartha ^{[1
]}

Mishra, Guru Prasad ^{[2
]}

机构：

[1] Siksha O Anusandhan Univ, Inst Tech Educ & Res, Dept Elect & Commun Engn, Bhubaneswar, Orissa, India

[2] Siksha O Anusandhan Univ, Inst Tech Educ & Res, Dept Elect & Instrumentat Engn, Device Simulat Lab, Bhubaneswar, Orissa, India

来源：

TURKISH JOURNAL OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCES | 2017年 / 25卷 / 02期

关键词：

CG-TFET; center potential; tunneling path; drain current; threshold voltage; FIELD-EFFECT TRANSISTORS; DRAIN CURRENT MODEL; SOI MOSFETS; THRESHOLD VOLTAGE;

D O I：

10.3906/elk-1502-74

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this paper, a 2-D cylindrical gate tunnel FE (CG-TFET) model is developed based on the potential at the center of cylinder. The center potential is obtained by Laplace solution in the cylindrical coordinate system and the accuracy is validated using a 2-D TCAD device simulator. The tunneling of charge carriers in the CG-TFET is analyzed using the center potential and the results are compared to the surface potential-based model. The drain current is formulated using the initial tunneling point and tunneling path, which further helps to obtain the threshold voltage of this model. The effect of gate engineering and band-gap engineering on the drain current are investigated. The device scaling capability of the model is discussed extensively.

引用

页码：770 / 782

页数：13

共 31 条

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