3510-V 390-mΩ . cm2 4H-SiC Lateral JFET on a Semi-Insulating Substrate

被引：8

作者：

Huang, Chih-Fang ^{[1
]}

Kan, Cheng-Li ^{[1
]}

Wu, Tian-Li ^{[1
]}

Lee, Meng-Chia ^{[1
]}

Liu, Yo-Zthu ^{[1
]}

Lee, Kung-Yen ^{[2
]}

Zhao, Feng ^{[3
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan

[2] Natl Chung Cheng Univ, Dept Elect Engn, Chiayi 62102, Taiwan

[3] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 09期

关键词：

High voltage; JFETs; lateral; silicon carbide; RESURF MOSFETS; MESFETS; POWER;

D O I：

10.1109/LED.2009.2027722

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of high-voltage 4H-SiC lateral JFETs on a semi-insulating substrate is reported in this letter. The design of the voltage-supporting layers is based on the charge compensation of p- and n-type epilayers. The best measured breakdown voltage is 3510 V, which, to the authors' knowledge, is the highest value ever reported for SiC lateral switching devices. The R-on of this device is 390 m Omega . cm(2), in which 61% is due to the drift-region resistance. The BV2/R-on is 32 MW/cm(2), which is typical among other reported SiC lateral devices.

引用

页码：957 / 959

页数：3

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