Can vacancies and their complexes with nonmetals prevent the lifetime reaching its intrinsic limit in silicon?

被引：0

作者：

Rougieux, Fiacre E. ^{[1
]}

Grant, Nicholas E. ^{[1
]}

Macdonald, Daniel ^{[1
]}

Murphy, John D. ^{[2
]}

机构：

[1] Australian Natl Univ, Coll Engn & Comp Sci, Res Sch Engn, GPO Box 4, Canberra, ACT 0200, Australia

[2] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

来源：

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年

关键词：

amorphous materials; charge carrier lifetime; photovoltaic cells; silicon; CZOCHRALSKI SILICON; DEFECT AGGREGATION; THERMAL DONORS; OXYGEN; NITROGEN;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Recombination active defects are found in as-grown high-purity Czochralski (Cz) and Floating Zone (FZ) n-type silicon wafers. Due to their low concentrations, the observed defects are unlikely to be identified through Deep-Level Transient Spectroscopy (DLTS) or Electron Paramagnetic Resonance (EPR), hence we use photoluminescence imaging, lifetime spectroscopy, and defect imaging along the ingot to help identify the defect(s). Our experimental findings suggest that vacancy-related complexes incorporated during ingot growth may be responsible for the decreased minority carrier lifetime.

引用

页数：4