Ultracompact multimode interference 3-dB coupler with strong lateral confinement by deep dry etching

被引:32
|
作者
Ma, Y [1 ]
Park, S [1 ]
Wang, LW [1 ]
Ho, ST [1 ]
机构
[1] Northwestern Univ, Inst Technol, Dept Elect & Comp Engn, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
3-dB coupler; deep dry etching; excess loss; imbalance; InP-InGaAsP; multimode interference; splitting ratio;
D O I
10.1109/68.841263
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Extremely short InP-InGaAsP MMI 3-dB couplers (L similar to 15-50 mu m) with conventional structure have been successfully fabricated. The significant size reduction was achieved by deep dry etching and tapered access waveguide with large S-bend design. Optical transmission measurements on these devices have been performed. An optical bandwidth about 80 nm with a limit of 2-dB excess loss was obtained for most of the couplers. During the whole tunable wavelength range (lambda similar to 1485-1580 nm), the imbalance is within +/-0.5 dB. Fabrication tolerance and polarization independence are also investigated and the results demonstrated the applicability of these ultracompact devices in high-density photonic integrated circuit.
引用
收藏
页码:492 / 494
页数:3
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