Phase-selective CVD of vanadium oxide nanostructures

被引：45

作者：

Mathur, S. ^{[1
]}

Ruegamer, T. ^{[1
]}

Grobelsek, I. ^{[1
]}

机构：

[1] Leibniz Inst New Mat, Dept Nanorystalline Mat & Thin Film Syst, D-66041 Saarbrucken, Germany

来源：

CHEMICAL VAPOR DEPOSITION | 2007年 / 13卷 / 01期

关键词：

molecular precursor; nanostructured films; vanadium oxide;

D O I：

10.1002/cvde.200606578

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Phase-selective synthesis of crystalline vanadium oxides is achieved by the CVD of vanadium oxo-tri-isopropoxide [VO((OPr)-Pr-i)(3)]. Preformed V-O and V=O units and their differential thermal stability present in the precursor enabled precise modulation of the vanadium/oxygen stoichiometry in the products of the CVD. No additional oxygen carrier is employed during the deposition processes. Subject to deposition temperature (400-700 degrees C), different phase compositions (V2O5, V7O13, and VO2) are directly obtained and are investigated regarding structural and electrical properties. Hall measurements on VO2 films show a sharp metal-to-semiconductor transition at 78 degrees C (single crystal, 68 degrees C) depending on their microstructure formed by an oriented aggregation of individual crystallites.

引用

页码：42 / 47

页数：6

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