Electronic and optical response of Cr-doped MoSe2 and WSe2: Compton measurements and first-principles strategies

被引:8
|
作者
Kumar, Kishor [1 ]
Heda, N. L. [2 ]
Jani, A. R. [3 ]
Ahuja, B. L. [1 ]
机构
[1] Mohanlal Sukhadia Univ, Univ Coll Sci, Dept Phys, Udaipur 313001, Rajasthan, India
[2] Univ Kota, Dept Pure & Appl Phys, Kota 324007, Rajasthan, India
[3] Sardar Patel Univ, Dept Phys, Vallabh Vidyanagar 388120, Gujarat, India
关键词
Compton scattering; Electronic structure; Density functional theory; Transition metal dichalcogenides; MOMENTUM DENSITY; PROFILES; SPECTROSCOPY; FUNCTIONALS; PERFORMANCE; SCATTERING; X=0.25;
D O I
10.1016/j.jpcs.2017.03.019
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In this paper, we present energy bands, density of states and Mulliken's population (MP) data using the linear combination of atomic orbitals (LCAO) method. To compare the theoretical momentum densities, we have also employed 100 mCi Am-241 Compton spectrometer to measure the Compton profiles of Cr0.5X0.5Se2 (X=Mo and W). The experimental Compton data have been used to check the performance of various exchange and correlation energies for the present mixed dichalcogenides within the LCAO scheme. It is seen that CPs based on the hybridization of Hartree-Fock and density functional theory give a better agreement with the experimental data than other schemes employed in the present investigations. All theoretical approximations show an indirect band gap between the Gamma and K points of the Brillouin zone. Further, equal-valence-electron-density scaled experimental data predict a more ionic character in Cr0.5W0.5Se2 than in Cr0.5Mo0.5Se2, which is in tune with our MP data. Going beyond the computation of electronic properties using LCAO, we have also reported accurate electronic and optical properties using the modified Becke-Johnson (mBJ) potential within the full potential augmented plane wave (FP-LAPW) method. Optical properties computed using the FP-LAPW-mBJ method show the feasibility of using both the mixed dichalcogenides in photovoltaic devices.
引用
收藏
页码:23 / 31
页数:9
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