Enhanced determination of emission fine structure and orientation of individual quantum dots based on correction algorithm for spectral diffusion

被引：1

作者：

Gumbsheimer, Pascal ^{[1
,2
]}

Conradt, Frieder ^{[1
,2
]}

Behovits, Yannic ^{[1
,2
]}

Huber, Steffen ^{[3
]}

Hinz, Christopher ^{[1
,2
]}

Negele, Carla ^{[3
]}

Mecking, Stefan ^{[3
]}

Seletskiy, Denis, V ^{[1
,2
]}

Leitenstorfer, Alfred ^{[1
,2
]}

机构：

[1] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

[2] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany

[3] Univ Konstanz, Dept Chem, Chair Chem Mat Sci, D-78464 Constance, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2021年 / 54卷 / 15期

关键词：

semiconductor quantum dots; compound nanoparticles; spectral diffusion; optical properties; spatial orientation; LINEARLY POLARIZED EMISSION; CORE/SHELL NANOCRYSTALS; SINGLE PHOTONS; MICROCAVITY; MICROSCOPY; EXCITONS;

D O I：

10.1088/1361-6463/abda83

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A robust algorithm based on cross-correlations and lucky imaging reliably allows the correction of spectrally diffused datasets. This step enables the resolution-limited analysis of the emission fine structure of semiconductor quantum dots (QDs). Bright and dark excitonic transitions are resolved with optimum signal-to-noise ratio, allowing for a precise determination of the angular direction of linear polarization of the different lines. The angular phases between polarization directions are intrinsically connected to the orientations of emission dipoles. This fact provides a tool for accurate numerical computation of the azimuth. and polar angle theta of the QD with respect to the optical axis. Our in-situ characterization of QD fine structure and orientation represents a precise and non-invasive method without requiring specialized equipment beyond a standard luminescence setup. In this way, important information is provided whenever efficient coupling of a quantum emitter to the electromagnetic field is targeted by various nano- and micro-optic strategies.

引用

页数：9

共 63 条

[31] Strain effects in and crystal structures of self-assembled InAs/GaAs quantum dots [J].