Carrier hopping in InAs/AlγGa1-γAs quantum dot heterostructures:: effects on optical and laser properties

被引：1
作者：
Polimeni, A [1 ]
Patanè, A
Henini, M
Eaves, L
Main, PC
Hill, G
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
PHYSICA E | 2000年 / 7卷 / 3-4期
基金：
英国工程与自然科学研究理事会;
关键词：
quantum dots; photoluminescence; electroluminescence; laser;
D O I：
10.1016/S1386-9477(99)00361-6
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The optical properties of InAs/AlyGa1-yAs self-assembled quantum dots are studied as a function of temperature from 10 K to room temperature. The temperature dependence of carrier hopping between dots is discussed in terms of the depth of the dot confinement potential and the dispersion in dot size and composition. We show that carrier hopping between dots influences both the electrical and optical properties of laser devices having dots as active medium. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：452 / 455
页数：4
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