High performance, low complexity 0.18 um SiGeBiCMOS technology for wireless circuit applications

被引：14

作者：

Feilchenfeld, N ^{[1
]}

Lanzerotti, L ^{[1
]}

Sheridan, D ^{[1
]}

Wuthrich, R ^{[1
]}

Geiss, P ^{[1
]}

Coolbaugh, D ^{[1
]}

Gray, P ^{[1
]}

He, J ^{[1
]}

Demag, P ^{[1
]}

Greco, J ^{[1
]}

Larsen, T ^{[1
]}

Patel, V ^{[1
]}

Zierak, M ^{[1
]}

Hodge, W ^{[1
]}

Rascoe, J ^{[1
]}

Trappasso, J ^{[1
]}

Orner, B ^{[1
]}

Norris, A ^{[1
]}

Hershberger, D ^{[1
]}

Voegeli, B ^{[1
]}

Voldman, S ^{[1
]}

Rassel, R ^{[1
]}

Ramachandrian, V ^{[1
]}

Gautsch, M ^{[1
]}

Eshun, E ^{[1
]}

Hussain, R ^{[1
]}

Jordan, D ^{[1
]}

St Onge, S ^{[1
]}

Dunn, J ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA

来源：

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2002年

关键词：

D O I：

10.1109/BIPOL.2002.1042917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC compatible, 0.18 um SiGe BiCMOS technology for wireless applications that offers 3 different breakdown voltage NPNs with the high performance device achieving F-t/F-max of 60/85 GHz with a 3.0 V BVCEO. In addition, a full suite of high performance passive devices complement the state-of-the-art SiGe wireless HBTs.

引用

页码：197 / 200

页数：4

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