Realization of high hole concentrations in Mg doped semipolar (10(1)over-bar1(1)over-bar) GaN

被引：17

作者：

Kaeding, J. F. ^{[1
]}

Asamizu, H.

Sato, H.

Iza, M.

Mates, T. E.

DenBaars, S. P.

Speck, J. S.

Nakamura, S.

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2378486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the growth of Mg doped semipolar (10 (1) over bar(1) over bar) GaN layers on vicinal (100) MgAl2O4 substrates miscut in the < 011 > direction by metal-organic chemical vapor deposition. A maximum hole concentration of 2.4x10(18) cm(-3) and a maximum mobility of 8 cm(2) V-1 s(-1), respectively, were achieved following a postgrowth thermal annealing step. Although the hole concentration decreased for Mg concentrations greater than 3.3x10(19) cm(-3), significant hole concentrations, combined with the reduction in internal polarization fields, make semipolar GaN layers suitable for the fabrication of high brightness optoelectronic devices. (c) 2006 American Institute of Physics.

引用

页数：3

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