Light-induced Interfacial Phenomena in Atomically Thin 2D van der Waals Material Hybrids and Heterojunctions

被引:38
作者
Li, Mingxing [1 ]
Chen, Jia-Shiang [2 ]
Cotlet, Mircea [1 ]
机构
[1] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
[2] SUNY Stony Brook, Dept Mat Sci & Chem Engn, Stony Brook, NY 11794 USA
关键词
TRANSITION-METAL DICHALCOGENIDES; NONRADIATIVE ENERGY-TRANSFER; QUANTUM DOTS; CHARGE-TRANSFER; SINGLE-LAYER; ELECTRON-TRANSFER; MONOLAYER MOS2; INTEGRATED-CIRCUITS; GRAPHENE; PERFORMANCE;
D O I
10.1021/acsenergylett.9b01399
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomically thin 2D van der Waals (2D-vDW) materials have attracted significant attention for optoelectronic applications in photo detectors, photovoltaics, and quantum information science. Their atomically thin thickness, however, renders them poor absorbers. Hybrid structures of 2D-vDW materials assembled with other semiconducting materials, such as quantum dots, nanowires, polymers, other 2D-vDW materials, or 3D bulk materials, have provided an elegant way to increase light harvesting and carrier generation via interfacial charge and energy transfer interactions. Here we present recent examples focused on the characterization of interfacial charge transfer and energy transfer in 2D-vDW hybrids and heterostructures and methods to modulate and control these processes through band gap engineering, morphology engineering, and external factors. Finally, we discuss potential future directions of research, including scalability from micron-sized flake-based devices to wafer size for commercial deployment, issues with long-term stability and performance, and the ability to extend the spectral range of these 2D hybrids.
引用
收藏
页码:2323 / 2335
页数:25
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