Preparation and characterization of Zn18O/Zn16O isotope heterostructure thin films

被引：4

作者：

Matsumoto, Kenji ^{[1
,2
]}

Adachi, Yutaka ^{[2
]}

Sakaguchi, Isao ^{[2
]}

Ohashi, Naoki ^{[1
,2
]}

Haneda, Hajime ^{[1
,2
]}

机构：

[1] Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2010年 / 30卷 / 02期

基金：

日本学术振兴会;

关键词：

Films; Defects; ZnO; SIMS; ZNO; FERROELECTRICITY; DIFFUSION; EPITAXY; LAYERS; SRTIO3;

D O I：

10.1016/j.jeurceramsoc.2009.06.023

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An oxygen isotope-based heterostructure zinc oxide (ZnO) thin film, (ZnO)-O-16/(ZnO)-O-18/(ZnO)-O-16, was made by pulsed laser deposition on an a-face sapphire substrate. The isotope-enriched (ZnO)-O-18 layer was made by irradiation of the isotope oxygen radical (O-18*). The isotopic ratio in the heterostructure film was analyzed via secondary ion mass spectroscopy (SIMS). The ratio of exchange from O-16 to O-18 was approximately 70% when the oxygen isotope was irradiated as a radical, while it was approximately 10% when the oxygen isotope was supplied as O-18(2) gas. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：423 / 428

页数：6

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