Highly Linear Ku-Band SiGe PIN Diode Phase Shifter in Standard SiGe BiCMOS Process

被引：18

作者：

Wang, Le ^{[1
]}

Sun, P. ^{[2
]}

You, Yu ^{[1
]}

Mikul, Alex ^{[1
]}

Bonebright, Rodney ^{[3
]}

Kromholtz, Gregory A. ^{[3
]}

Heo, Deukhyoun ^{[1
]}

机构：

[1] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99164 USA

[2] IBM Corp, Essex Jct, VT 05452 USA

[3] Boeing Co, Seattle, WA 98101 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 01期

基金：

美国国家科学基金会;

关键词：

Monolithic microwave integrated circuit (MMIC); phase shifter; PIN diode; switched filter; X-BAND;

D O I：

10.1109/LMWC.2009.2035962

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a fully integrated highly linear 4-bit SiGe PIN diode phase shifter MMIC for Ku-band phase-array application in the standard SiGe BiCMOS process. High-performance customized SiGe PIN diode switches are employed for high linearity and low insertion loss. The use of differential inductors in the hybrid switched filters makes this phase shifter compact in size. Measurements show 20 dB +/- 5 dB input/output return loss, less than +/- 1.8 degrees phase variation, and maximum 37 dBm input-referred IP3 over the 14.5-15.5 GHz frequency range, while this phase shifter draws an average current of 3.5 mA from a 3.3 V power supply. To the authors' best knowledge, this 4-bit phase shifter MMIC achieves the highest linearity at Ku-band in the standard SiGe BiCMOS process without utilizing any post-fabrication process for low loss transmission lines.

引用

页码：37 / 39

页数：3

共 8 条

[1] A compact 5-bit phase-shifter MMIC for K-band satellite communication systems [J].

Campbell, CF ;

Brown, SA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2000, 48 (12) :2652-2656

[2] A 12-GHz SiGe phase shifter with integrated LNA [J].

Hancock, TM ;

Rebeiz, GM .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (03) :977-983

[3] A 4-bit CMOS phase shifter using distributed active switches [J].

Kang, Dong-Woo ;

Hong, Songcheol .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2007, 55 (07) :1476-1483

[4] 0.13-μm CMOS phase shifters for X-, Ku-, and K-band phased arrays [J].

Koh, Kwang-Jin ;

Rebeiz, Gabriel M. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2007, 42 (11) :2535-2546

[5] 5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology [J].

Morton, M. A. ;

Comeau, J. P. ;

Cressler, J. D. ;

Mitchell, M. ;

Papapolymerou, J. .

IET MICROWAVES ANTENNAS & PROPAGATION, 2008, 2 (01) :19-22

[6] Sources of phase error and design considerations for silicon-based monolithic high-pass/low-pass microwave phase shifters [J].

Morton, Matthew A. ;

Comeau, Jonathan P. ;

Cressler, John D. ;

Mitchell, Mark ;

Papapolymerou, John .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (12) :4032-4040

[7] A novel SiGePIN diode SPST switch for broadband T/R module [J].

Sun, Pinping ;

Upadhyaya, Parag ;

Jeong, Dong-Ho ;

Heo, Deukhyoun ;

La Rue, George S. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2007, 17 (05) :352-354

[8] Broad-band SiGe MMICs for phased-array radar applications [J].

Tayrani, R ;

Teshiba, MA ;

Sakamoto, GM ;

Chaudhry, Q ;

Alidio, R ;

Kang, YS ;

Ahmad, IS ;

Cisco, TC ;

Hauhe, M .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (09) :1462-1470

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