Digital etching for highly reproducible low damage gate recessing on AlGaN/GaN HEMTs

被引：40

作者：

Buttari, D ^{[1
]}

Heikman, S ^{[1
]}

Keller, S ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146788

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A room temperature digital etching technique for aluminum gallium nitride has been developed. An oxidizing agent and an acid have been used in a two step etching cycle to remove aluminum gallium nitride in approximately 5 - 6 Angstrom increments. The process has been characterized to be reasonably linear and highly repeatable, offering an alternative to currently not available gate recess etch stopper technologies. Recessed gate Al0.35Ga0.66N/GaN HEMTs on sapphire were compared to un-recessed devices realized on the same sample. A fivefold gate leakage decrease and negligible variations on breakdown voltage support digital recessing as a viable solution for highly reproducible low surface-damage gate recessed structures.

引用

页码：461 / 469

页数：9

共 13 条

[1]

ARCHER RJ, 1957, J ELECTROCHEMICAL SO, P619

[2]

Bozada C. A., 1999, U. S. patent, Patent No. [6,004,881, 6004881]

[3] Minimization of leakage current of recessed gate AlGaN/GaN HEMTs by optimizing the dry-etching process [J].

Breitschädel, O ;

Kuhn, B ;

Scholz, F ;

Schweizer, H .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) :1420-1423

[4] Recessed gate GaN modfets [J].

Burm, J ;

Schaff, WJ ;

Martin, GH ;

Eastman, LF ;

Amano, H ;

Akasaki, I .

SOLID-STATE ELECTRONICS, 1997, 41 (02) :247-250

[5] Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs [J].

Buttari, D ;

Chini, A ;

Meneghesso, G ;

Zanoni, E ;

Chavarkar, P ;

Coffie, R ;

Zhang, NQ ;

Heikman, S ;

Shen, L ;

Xing, H ;

Zheng, C ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (03) :118-120

[6] Cl2 reactive ion etching for gate recessing of AlGaN/GaN field-effect transistors [J].

Chen, CH ;

Keller, S ;

Haberer, ED ;

Zhang, LD ;

DenBaars, SP ;

Hu, EL ;

Mishra, UK ;

Wu, YF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2755-2758

[7] Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors [J].

Dimitrov, R ;

Tilak, V ;

Yeo, W ;

Green, B ;

Kim, H ;

Smart, J ;

Chumbes, E ;

Shealy, JR ;

Schaff, W ;

Eastman, LF ;

Miskys, C ;

Ambacher, O ;

Stutzmann, M .

SOLID-STATE ELECTRONICS, 2000, 44 (08) :1361-1365

[8] Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire [J].

Egawa, T ;

Zhao, GY ;

Ishikawa, H ;

Umeno, M ;

Jimbo, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :603-608

[9] Inductively coupled Cl2/Ar/O2 plasma etching of GaN, InGaN, and AlGaN [J].

Lee, JM ;

Chang, KM ;

Park, SJ ;

Jang, HK .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (06) :842-845

[10] Photo-electrochemical gate recess etching for the fabrication of AlGaN/GaN heterostructure field effect transistor [J].

Lee, JS ;

Kim, JW ;

Jung, DC ;

Kim, CS ;

Lee, WS ;

Lee, JH ;

Shin, JH ;

Shin, MW ;

Oh, JE ;

Lee, JH .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A) :L198-L200

← 1 2 →