Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

被引：18

作者：

Chao, Yu-Chiang ^{[3
]}

Lin, Yi-Cheng ^{[3
]}

Dai, Min-Zhi ^{[3
]}

Zan, Hsiao-Wen ^{[1
,2
]}

Meng, Hsin-Fei ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 20期

关键词：

ageing; organic semiconductors; plasma materials processing; polymers; transistors; INDIUM-TIN-OXIDE; WORK FUNCTION; DEPENDENCE;

D O I：

10.1063/1.3261749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 10(4) is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

引用

页数：3

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