Probing Individual Quantum Dots: Noise in Self-Assembled Systems

被引：0
作者：
Vicaro, K. O. [1 ]
Gutierrez, H. R. [1 ]
Seabra, A. C. [2 ]
Schulz, P. A. [1 ]
Cotta, M. A. [1 ]
机构：
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, UNICAMP, BR-13083970 Campinas, SP, Brazil
[2] Univ Sao Paulo, Lab Sistemas Integraveis, BR-05508900 Sao Paulo, Brazil
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 9卷 / 11期
基金：
巴西圣保罗研究基金会;
关键词：
Quantum Dots; InAs/InP; Random Telegraph Noise; Hopping Transport; ELECTRICAL-PROPERTIES; TRANSPORT; THRESHOLD; 1/F;
D O I：
10.1166/jnn.2009.1308
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this work we explore the noise characteristics in lithographically-defined two terminal devices containing self-assembled InAs/InP quantum dots. The experimental ensemble of InAs dots show random telegraph noise (RTN) with tuneable relative amplitude-up to 150%-in well defined temperature and source-drain applied voltage ranges. Our numerical simulation indicates that the RTN signature correlates with a very low number of quantum dots acting as effective charge storage centres in the structure for a given applied voltage. The modulation in relative amplitude variation can thus be associated to the altered electrostatic potential profile around such centres and enhanced carrier scattering provided by a charged dot.
引用
收藏
页码：6390 / 6395
页数：6
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