Enhancement of light extraction from a silicon quantum dot light-emitting diode containing a rugged surface pattern

被引：27

作者：

Kim, Kyung-Hyun ^{[1
]}

Shin, Jae-Heon ^{[1
]}

Park, Nae-Man ^{[1
]}

Huh, Chul ^{[1
]}

Kim, Tae-Youb ^{[1
]}

Cho, Kwan-Sik ^{[1
]}

Hong, Jong Cheol ^{[1
]}

Sung, Gun Yong ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, IT Convergence Technol Res Div, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

关键词：

D O I：

10.1063/1.2387862

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The enhancement in light extraction efficiency from a periodic micron-scale rugged surface pattern on Si quantum dot light-emitting-diode (Si-QD LED) structures was investigated, both numerically and experimentally. Micron-scale rugged surface patterns were fabricated on the top layer of the Si-QD LED to increase the extraction of light from the active layer. The optimum light extraction condition for a Si-QD LED corresponded to a pattern size/period ratio of similar to 0.7. In experiments, the luminescent powers of a Si-QD LED with/without micron-scale surface patterns increase linearly with current density, and the efficiency of light extraction was enhanced by a factor of 2.8. (c) 2006 American Institute of Physics.

引用

页数：3

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