Multilayer Black Phosphorus as a Versatile Mid-Infrared Electro-optic Material

被引：157
作者：
Lin, Charles [1 ]
Grassi, Roberto [2 ]
Low, Tony [2 ]
Helmyt, Amr S. [1 ]
机构：
[1] Univ Toronto, Edward S Rogers Dept Elect & Comp Engn, 10 Kings Coll Rd, Toronto, ON M5S 3G4, Canada
[2] Univ Minnesota, Dept Elect & Comp Engn, 200 Union St SE,4-174 Keller Hall, Minneapolis, MN 55455 USA
来源：
NANO LETTERS | 2016年 / 16卷 / 03期
关键词：
Black phosphorus; electro-optics; quantum-confined Franz-Keldysh effect; Burstein-Moss shift; mid-infrared; modulator; FIELD-EFFECT TRANSISTORS; QUANTUM-WELL STRUCTURES; GRAPHENE; MODULATORS; ELECTROABSORPTION; SILICON; GERMANIUM; MOBILITY;
D O I：
10.1021/acs.nanolett.5b04594
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We investigate the electro-optic properties of black phosphorus (BP) thin films for optical modulation in the mid-infrared frequencies. Our calculation indicates that an applied out-of-plane electric field may lead to red-, blue-, or bidirectional shift in BP's absorption edge. This is due to the interplay between the field-induced quantum-confined Franz-Keldysh effect and the Pauli-blocked Burstein-Moss shift. The relative contribution of the two electro-absorption mechanisms depends on doping range, operating wavelength, and BP film thickness. For proof-of concept, simple modulator configuration with BP overlaid over a silicon nanowire is studied. Simulation results show that operating BP in the quantum-confined Franz-Keldysh regime can improve the maximal attainable absorption as well as power efficiency compared to its graphene counterpart.
引用
收藏
页码：1683 / 1689
页数：7
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