Oxygen vacancy in monoclinic HfO2:: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

被引:207
作者
Broqvist, Peter [1 ]
Pasquarello, Alfredo
机构
[1] Ecole Polytech Fed Lausanne, Inst Theoret Phys, CH-1015 Lausanne, Switzerland
[2] Inst Romand Rech Numer Phys Mat, IRRMA, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1063/1.2424441
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors calculate energy levels associated with the oxygen vacancy in monoclinic HfO2 using a hybrid density functional which accurately reproduces the experimental band gap. The most stable charge states are obtained for varying Fermi level in the HfO2 band gap. To compare with measured defect levels, they determine total energy differences specific to the considered experiment. Their results show that the oxygen vacancy can consistently account for the defect levels observed in (Poole-Frenkel-type) trap assisted conduction, direct electron injection, and optical absorption experiments. (c) 2006 American Institute of Physics.
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页数:3
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