Effect of sputtering input power on structural inhomogeneities in as-sputtered Fe-Hf-N thin films

被引：9
作者：
Kim, KH
Kim, YH
Kim, J
Han, SH
Kim, HJ
机构：
[1] Korea Inst Sci & Tech, Thin Film Tech Res Ctr, Seoul 130650, South Korea
[2] Myongji Univ, Dept Phys, Youngin 449728, Kyunggi, South Korea
[3] Hanyang Univ, Dept Met & Mat Sci, Ansan 425791, Kyunggi, South Korea
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 215卷
关键词：
nanocrystalline; ferromagnetic resonance;
D O I：
10.1016/S0304-8853(00)00161-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The magnetic properties of Fe-Hf-N thin films, deposited by a reactive RF magnetron sputtering method, depend on input powers (150, 300, 450, 550 W). The gamma'-Fe4N phase is observed in all samples by TEM and ESCA, FMR results also show extra resonance peaks with weak intensity, observed at a higher field than that of main mode-(alpha-Fe) except 450 W. The calculated frequency dependency of permeability does not coincide with experimental values except 450 W. These discrepancies are expected to be due to the local anisotropy created by an inhomogeneous magnetic phase. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
引用
收藏
页码：368 / 371
页数：4
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