Strained 1.3μm MQW AlGaInAs lasers grown by digital alloy MBE

被引：27

作者：

Springthorpe, AJ ^{[1
]}

Garanzotis, T ^{[1
]}

Paddon, P ^{[1
]}

Pakulski, G ^{[1
]}

White, KI ^{[1
]}

机构：

[1] Nortel Networks, Ottawa, ON K1Y 4H7, Canada

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 12期

关键词：

D O I：

10.1049/el:20000789

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaInAs strained MQW lasers, emitting at 1.3 mu m, have been prepared for the first time using a digital alloy approach. 2 mu m stripe geometry lasers have characteristics comparable to those of lasers prepared using bulk alloy layers. Infinite length threshold current densities are as low as 140kA/cm(2)/quantum well, and T-0 values (20-40 degrees C) range from 75-90K for chip lengths of 375-2375 mu m.

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页码：1031 / 1032

页数：2

相关论文

共 6 条

[1] VERY LOW THRESHOLD CURRENT-DENSITY SCH-MQW LASER-DIODES EMITTING AT 1.55-MU-M [J].

GLEW, RW ;

GARRETT, B ;

GREENE, PD .

ELECTRONICS LETTERS, 1989, 25 (16) :1103-1104

[2] 1.58-μm lattice-matched and strained digital alloy AlGaInAs-InP multiple-quantum-well lasers [J].

Liu, GT ;

Stintz, A ;

Pease, EA ;

Newell, TC ;

Malloy, KJ ;

Lester, LF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (01) :4-6

[3] PARABOLIC QUANTUM WELLS WITH THE GAAS-ALXGA1-XAS SYSTEM [J].

MILLER, RC ;

GOSSARD, AC ;

KLEINMAN, DA ;

MUNTEANU, O .

PHYSICAL REVIEW B, 1984, 29 (06) :3740-3743

[4] AlGalnAs/InP strained-layer quantum well lasers at 1.3 μm grown by solid source molecular beam epitaxy [J].

Savolainen P. ;

Toivonen M. ;

Orsila S. ;

Saarinen M. ;

Melanen P. ;

Vilokkinen V. ;

Dumitrescu M. ;

Panarello T. ;

Pessa M. .

Journal of Electronic Materials, 1999, 28 (8) :980-985

[5] LOW-THRESHOLD 1.5 MICRO-M COMPRESSIVE-STRAINED MULTIPLE-QUANTUM-WELL AND SINGLE-QUANTUM-WELL LASERS [J].

ZAH, CE ;

BHAT, R ;

FAVIRE, FJ ;

MENOCAL, SG ;

ANDREADAKIS, NC ;

CHEUNG, KW ;

HWANG, DMD ;

KOZA, MA ;

LEE, TP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1440-1450

[6] HIGH-PERFORMANCE UNCOOLED 1.3-MU-M ALXGAYIN1-X-YAS/INP STRAINED-LAYER QUANTUM-WELL LASERS FOR SUBSCRIBER LOOP APPLICATIONS [J].

ZAH, CE ;

BHAT, R ;

PATHAK, BN ;

FAVIRE, F ;

LIN, W ;

WANG, MC ;

ANDREADAKIS, NC ;

HWANG, DM ;

KOZA, MA ;

LEE, TP ;

WANG, Z ;

DARBY, D ;

FLANDERS, D ;

HSIEH, JJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :511-523