Electrical and chemical properties of the HfO2/SiO2/Si stack: impact of HfO2 thickness and thermal budget

被引：4

作者：

Martinez, E. ^{[1
]}

Leroux, C. ^{[1
]}

Benedetto, N. ^{[1
]}

Gaumer, C.

Charbonnier, M. ^{[1
]}

Licitra, C. ^{[1
]}

Guedj, C. ^{[1
]}

Fillot, F. ^{[1
]}

Lhostis, S.

机构：

[1] MINATEC, CEA, LETI, 17 Rue Martyrs, F-38054 Grenoble 09, France

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 | 2008年 / 16卷 / 05期

关键词：

D O I：

10.1149/1.2981598

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, we investigate the impact of thermal budget and HfO2 thickness on the chemical and electronic properties of the HfO2/SiO2/Si stack. In the first part, we have seen that high temperature anneal at 750 degrees C induces both the regrowth and the reoxidation of the SiO2 interfacial layer. A bias drop of 1.1 eV is observed along the whole stack via the C1s core level shift and is ascribed both to the interfacial dipole and to fixed charges in the dielectric. Electrical measurements suggest dipole strength of 0.2 eV. In the second part, ellipsometry and ultraviolet photoelectron spectroscopy are combined to deduce the HfO2 electron affinity (1.8 +/- 0.2 eV). This value does not change with increasing thermal budget or dielectric thickness. HfO2/Si barrier height of 2.1 +/- 0.2 eV is henceforward deduced, in agreement with previous IPE results.

引用

页码：161 / +

页数：2

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