Electron transport in a double quantum ring: Evidence of an AND gate

被引:45
作者
Maiti, Santanu K. [1 ,2 ]
机构
[1] Narasinha Dutt Coll, Dept Phys, Howrah 711101, India
[2] Saha Inst Nucl Phys, Theoret Condensed Matter Phys Div, Kolkata 700064, India
关键词
Double quantum ring; Conductance; I-V characteristic; AND gate; MOLECULAR WIRES; MAGNETORESISTANCE; INTERFERENCE; TRANSMISSION; CONDUCTANCE;
D O I
10.1016/j.physleta.2009.10.002
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We explore AND gate response in a double quantum ring where each ring is threaded by a magnetic flux phi. The double quantum ring is attached symmetrically to two semi-infinite one-dimensional metallic electrodes and two gate voltages, namely, V-a and V-b, are applied, respectively, in the lower arms of the two rings which are treated as two inputs of the AND gate. The system is described in the tight-binding framework and the calculations are done using the Green's function formalism. Here we numerically compute the conductance-energy and current-voltage characteristics as functions of the ring-to-electrode coupling strengths, magnetic flux and gate voltages. Our study suggests that, for a typical value of the magnetic flux phi = phi(0)/2 (phi(0) = ch/e, the elementary flux-quantum) a high output current (1) (in the logical sense) appears only if both the two inputs to the gate are high (1), while if neither or only one input to the gate is high (1), a low output current (0) results. It clearly demonstrates the AND gate behavior and this aspect may be utilized in designing an electronic logic gate. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:4470 / 4474
页数:5
相关论文
共 25 条
[1]   MOLECULAR RECTIFIERS [J].
AVIRAM, A ;
RATNER, MA .
CHEMICAL PHYSICS LETTERS, 1974, 29 (02) :277-283
[2]   Anti-coherence based molecular electronics: XOR-gate response [J].
Baer, R ;
Neuhauser, D .
CHEMICAL PHYSICS, 2002, 281 (2-3) :353-362
[3]   Phase coherent electronics: A molecular switch based on quantum interference [J].
Baer, R ;
Neuhauser, D .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (16) :4200-4201
[4]   Large on-off ratios and negative differential resistance in a molecular electronic device [J].
Chen, J ;
Reed, MA ;
Rawlett, AM ;
Tour, JM .
SCIENCE, 1999, 286 (5444) :1550-1552
[5]  
CRELLANA PA, 2003, PHYS REV B, V67
[6]  
Cui WY, 2007, EUR PHYS J B, V59, P47, DOI 10.1140/epjb/e2()07-00258-4
[7]   Measurement of the conductance of single conjugated molecules [J].
Dadosh, T ;
Gordin, Y ;
Krahne, R ;
Khivrich, I ;
Mahalu, D ;
Frydman, V ;
Sperling, J ;
Yacoby, A ;
Bar-Joseph, I .
NATURE, 2005, 436 (7051) :677-680
[8]  
Datta S., 1997, ELECT TRANSPORT MESO
[9]   Magnetoresistance of nanoscale molecular devices [J].
Hod, O ;
Rabani, E ;
Baer, R .
ACCOUNTS OF CHEMICAL RESEARCH, 2006, 39 (02) :109-117
[10]   A parallel electromagnetic molecular logic gate [J].
Hod, O ;
Baer, R ;
Rabani, E .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (06) :1648-1649