GLAD synthesised erbium doped In2O3 nano-columns for UV detection

被引：23

作者：

Ghosh, Anupam ^{[1
]}

Murkute, Punam ^{[2
]}

Lahiri, Rini ^{[3
]}

Chakrabarti, Subhananda ^{[4
]}

Chattopadhyay, Kalyan Kumar ^{[5
]}

Mondal, Aniruddha ^{[1
]}

机构：

[1] Natl Inst Technol Durgapur, Dept Phys, Durgapur 713209, India

[2] Indian Inst Technol, Ctr Res Nanotechnol & Sci, Mumbai 400076, Maharashtra, India

[3] Natl Inst Technol Nagaland, Dept Elect & Commun Engn, Dimapur 797103, India

[4] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India

[5] Jadavpur Univ, Dept Phys, Kolkata 700032, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2019年 / 30卷 / 13期

关键词：

TIO2; THIN-FILMS; ELECTRICAL-PROPERTIES; INDIUM OXIDE; ER; PERFORMANCE; DEPOSITION; QUALITY; GROWTH; PHOTOLUMINESCENCE; LUMINESCENCE;

D O I：

10.1007/s10854-019-01638-w

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have reported the growth of In2O3 and Er-doped In2O3 (In2O3:Er) nano-columns (NCols) by e-beam cum GLAD techniques. An increase in the packing density of the NCols was observed with increasing Er doping. In2O3 shows a body-centred cubic crystal structure. Reduction in the crystallite size with Er-doping is observed. The bandgap of undoped In2O3 NCols (similar to 3.50eV) is increased to a maximum similar to 3.80eV (0.48at.% Er). The free carrier and trap concentration decrease from similar to 1.46x10(17) to similar to 4.18x10(15)cm(-3) and similar to 2.78x10(17)cm(-3) to similar to 8.45x10(15)cm(-3) respectively for In2O3 NCol and 0.48at.% In2O3:Er NCol control samples. The Au/0.48at.% In2O3:Er/Si device showed higher sensitivity towards white light and 350nm UV light compared to other devices under different applied powers of the xenon (Xe) lamp. The UV responsivity was observed to be similar to 2.2 times larger than the visible light. The temporal response of Au/0.48at.% In2O3:Er/Si device also showed noteworthy development.

引用

页码：12739 / 12752

页数：14

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