Enhanced light output in double roughened GaN light-emitting diodes via various texturing treatments of undoped-GaN layer

被引：9

作者：

Peng, Wei Chih ^{[1
]}

Wu, YewChung Sermon ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 10A期

关键词：

InGaN-GaN light-emitting diodes; surface-roughening; wafer-bonding; laser lift-off technology;

D O I：

10.1143/JJAP.45.7709

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InGaN-GaN light-emitting diodes (LEDs) with double roughened (p-GaN and undoped-GaN) surfaces were successfully fabricated by surface-roughening, wafer-bonding and laser lift-off technologies. The effect of the roughness of the undoped-GaN layer on the performance of double roughened LEDs was investigated. It was found that the rms roughness of the undoped-GaN layer increased from 18.6 to 146.7 nm, the output power increased from 7.2 to 10.2 mW, and view angle decreased from 133.6 to 116 degrees.

引用

页码：7709 / 7712

页数：4

共 15 条

[1] Nitride-based LEDs with an SPS Tunneling contact layer and an ITO transparent contact [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Chuang, RW ;

Lai, WC ;

Kuo, CH ;

Hsu, YP ;

Lin, YC ;

Shei, SC ;

Lo, HM ;

Ke, JC ;

Sheu, JK .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (04) :1002-1004

[2]

CHENG JH, UNPUB APPL PHYS LETT

[3] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[4] GaN-based light-emitting diodes with indium tin oxide texturing window layers using natural lithography [J].

Horng, RH ;

Yang, CC ;

Wu, JY ;

Huang, SH ;

Lee, CE ;

Wuu, DS .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[5] InGaN-GaN MQW LEDs with Si treatment [J].

Hsu, YP ;

Chang, SJ ;

Su, YK ;

Chen, SC ;

Tsai, JM ;

Lai, WC ;

Kuo, CH ;

Chang, CS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (08) :1620-1622

[6] Improved light-output and electrical performance of InGaN-based, light-emitting diode by microroughening of the p-GaN surface [J].

Huh, C ;

Lee, KS ;

Kang, EJ ;

Park, SJ .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :9383-9385

[7] III-nitride blue microdisplays [J].

Jiang, HX ;

Jin, SX ;

Li, J ;

Shakya, J ;

Lin, JY .

APPLIED PHYSICS LETTERS, 2001, 78 (09) :1303-1305

[8]

Kelly MK, 1997, PHYS STATUS SOLIDI A, V159, pR3, DOI 10.1002/1521-396X(199701)159:1<R3::AID-PSSA99993>3.0.CO

[9]

2-F

[10] Improved light output power of InGaN/GaN MQW LEDs by lower temperature p-GaN rough surface [J].

Liu, CH ;

Chuang, RW ;

Chang, SJ ;

Su, YK ;

Wu, LW ;

Lin, CC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 112 (01) :10-13

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