Growth and characterization of In-based nitride compounds

被引：54
作者：
Bedair, SM
McIntosh, FG
Roberts, JC
Piner, EL
Boutros, KS
ElMasry, NA
机构：
[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695
[2] ADV TECHNOL MAT INC,DANBURY,CT 06810
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 178卷 / 1-2期
关键词：
InGaN; ALE; MOCVD; quantum wells; growth model;
D O I：
10.1016/S0022-0248(97)00069-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Development of In-based nitride compounds is lagging behind the corresponding Al- and Ga-based compounds. Potential problems facing the growth of InxGa(1-x) N films and their double heterostructures will be outlined. A tentative model which describes the reaction pathways taking place during the growth of these In-based nitride compounds is presented and is used to explain both our ALE and MOCVD results. In addition, growth parameters leading to the achievement of high values of x, reduction of In metal incorporation and improvement of both the structural and optical properties of InGaN, AlGaInN and InN will be discussed. Properties of AlGaN/InGaN/AlGaN and AlGaInN/InGaN/AlGaInN double heterostructures will be presented, with emission wavelengths in the 400-550nm range.
引用
收藏
页码：32 / 44
页数：13
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