Fundamental growth processes in the molecular beam epitaxy of III-V compounds - an historical perspective

[1] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[3] Nucleation and growth of islands on GaAs surfaces [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (20) : 3938 - 3941

[4] Direct observation of anisotropic step activity on GaAs(001) [J]. SURFACE SCIENCE, 1999, 429 (1-3) : L492 - L496

[5] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[6] Origin of electron diffraction oscillations during crystal growth [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (22) : 4935 - 4938

[7] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[8] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[9] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &

[10] Mean-field theory of quantum dot formation [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (05) : 897 - 900

[1] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &

[2] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS [J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461

[3] Nucleation and growth of islands on GaAs surfaces [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (20) : 3938 - 3941

[4] Direct observation of anisotropic step activity on GaAs(001) [J]. SURFACE SCIENCE, 1999, 429 (1-3) : L492 - L496

[5] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J]. PHILOSOPHICAL MAGAZINE, 1966, 14 (128): : 301 - &

[6] Origin of electron diffraction oscillations during crystal growth [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (22) : 4935 - 4938

[7] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[8] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[9] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &

[10] Mean-field theory of quantum dot formation [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (05) : 897 - 900