Silicon adatom switching and manipulation on Si(111)-7 x 7

被引：4

作者：

Sagisaka, Keisuke ^{[1
]}

Luce, Alexander ^{[2
]}

Fujita, Daisuke ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Nanocharacterizat Ctr, Tsukuba, Ibaraki 3050047, Japan

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 04期

关键词：

FLIP-FLOP MOTION; SINGLE-MOLECULE; BUCKLED DIMERS; STM; JUNCTION; SURFACE; ATOMS;

D O I：

10.1088/0957-4484/21/4/045707

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on a multiple-state switching behavior in the tip height or tunneling current of scanning tunneling microscopy on the Si(111)-7 x 7 surface. This switching is caused by displacement of silicon adatoms under the influence of energetic tunneling electrons. When the tip is fixed over a center adatom, five well-defined levels appear in the measured tip height and tunneling current. These levels are attributed to different electronic structures, depending on the configuration of the center adatoms in the unit cell. We also demonstrate manipulations of the

引用

页数：6

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