Preparation, structure and properties of Mn-doped ZnO rod arrays

被引：40

作者：

Wu, Dianwu ^{[1
]}

Huang, Zhongbing ^{[1
]}

Yin, Guangfu ^{[1
]}

Yao, Yadong ^{[1
]}

Liao, Xiaoming ^{[1
]}

Han, Dong ^{[2
]}

Huang, Xia ^{[2
]}

Gu, Jianwen ^{[3
]}

机构：

[1] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610065, Peoples R China

[2] Aluminum Corp China Ltd, Zhengzhou Res Inst, Zhengzhou, Peoples R China

[3] Mil Gen Hosp Chengdu PLA, Chengdu, Peoples R China

来源：

CRYSTENGCOMM | 2010年 / 12卷 / 01期

基金：

中国国家自然科学基金;

关键词：

NANOROD ARRAYS; RECTIFYING DIODES; NANOWIRE ARRAYS; QUANTUM DOTS; FABRICATION; GROWTH; SPECTROSCOPY;

D O I：

10.1039/b909780e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Mn-doped ZnO rod arrays were successfully prepared on zinc substrate by a simple aqueous solution method. X-Ray diffraction and high resolution transmission electron microscopy results indicate the doped Mn2+ has successfully incorporated into the ZnO crystal lattice. The optical, magnetic and electrical properties of as-prepared ZnO rod arrays were all changed due to Mn2+ doping into ZnO rods. Photoluminescence spectra at room temperature suggest that the band gap increases with increasing the Mn concentrations in ZnO rods. The M-H curves of all Mn-doped ZnO rod arrays show obvious ferromagnetic characteristics at room temperature. The current-voltage characteristic curves of Mn-doped ZnO rod arrays indicate that the samples are typical semiconductors.

引用

页码：192 / 198

页数：7

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