Characteristics of ZrO2 thin films by atomic layer deposition for alternative gate dielectric applications

被引：0
作者：
Park, J [1 ]
Choi, B [1 ]
Park, N [1 ]
Shin, HJ [1 ]
Lee, JG [1 ]
Kim, J [1 ]
机构：
[1] Kookmin Univ, Dept Mat Engn, Seoul, South Korea
来源：
INTEGRATED FERROELECTRICS | 2002年 / 48卷
关键词：
ZrO2; ALD; Zr t-butoxide; H2O; MO-ALD;
D O I：
10.1080/10584580290171432
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated material and electrical properties of ZrO2 films deposited by atomic layer deposition (ALD) using Zr t-butoxide and water (H2O). As-deposited ZrO2 films show 2.4nm of CET measured at 100kHz with frequency dispersion and high leakage current (3A/cm2) at 1V. These undesirable properties may results from metallic Zr and carbon contamination in the films. The post-deposition annealing was performed in an O-2 ambient at 500square to improve the capacitance and reduce the leakage current. ZrO2 films deposited by ALD and annealed at 500degreesC exhibit CET(Capacitance Equivalent Thickness) of 2nm without dispersion issues and leakage current less than 10(-3) A/cm(2) at 1V.
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页码：23 / 32
页数：10
相关论文
共 16 条
  • [1] Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process
    Aarik, J
    Aidla, A
    Mändar, H
    Uustare, T
    Sammelselg, V
    [J]. THIN SOLID FILMS, 2002, 408 (1-2) : 97 - 103
  • [2] Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
    Alers, GB
    Werder, DJ
    Chabal, Y
    Lu, HC
    Gusev, EP
    Garfunkel, E
    Gustafsson, T
    Urdahl, RS
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (11) : 1517 - 1519
  • [3] Structure and stability of ultrathin zirconium oxide layers on Si(001)
    Copel, M
    Gribelyuk, M
    Gusev, E
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (04) : 436 - 438
  • [4] Structural and electrical characterization of ALCVD ZrO2 thin films on silicon
    Ferrari, S
    Dekadjevi, DT
    Spiga, S
    Tallarida, G
    Wiemer, C
    Fanciulli, M
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2002, 303 (01) : 29 - 34
  • [5] High-resolution depth profiling in ultrathin Al2O3 films on Si
    Gusev, EP
    Copel, M
    Cartier, E
    Baumvol, IJR
    Krug, C
    Gribelyuk, MA
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (02) : 176 - 178
  • [6] Thermodynamic stability of binary oxides in contact with silicon
    Hubbard, KJ
    Schlom, DG
    [J]. JOURNAL OF MATERIALS RESEARCH, 1996, 11 (11) : 2757 - 2776
  • [7] Alternative dielectrics to silicon dioxide for memory and logic devices
    Kingon, AI
    Maria, JP
    Streiffer, SK
    [J]. NATURE, 2000, 406 (6799) : 1032 - 1038
  • [8] MOS transistors with stacked SiO2-Ta2O5-SiO2 gate dielectrics for giga-scale integration of CMOS technologies
    Kizilyalli, IC
    Huang, RYS
    Roy, PK
    [J]. IEEE ELECTRON DEVICE LETTERS, 1998, 19 (11) : 423 - 425
  • [9] Kukli K, 2000, CHEM VAPOR DEPOS, V6, P297, DOI 10.1002/1521-3862(200011)6:6<297::AID-CVDE297>3.0.CO
  • [10] 2-8
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